All Transistors. 3DK023F Datasheet

 

3DK023F Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK023F

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

3DK023F Transistor Equivalent Substitute - Cross-Reference Search

 

3DK023F Datasheet (PDF)

1.1. 3dk023f.pdf Size:153K _china

3DK023F

3DK023F 型 NPN 硅大功率开关晶体管 参数符号 测试条件 规范值 单位 PCM Ta=25℃ 1.0 W 极 ICM 1.0 A 限 Tjm 150 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=2mA ≥250 V V(BR)CEO ICE=2mA ≥200 V V(BR)EBO IEB=4mA ≥6.0 V ICBO VCB=140V ≤1 μA 直 VBEsat IC=750mA ≤1.2 流 V IB=75mA VCEsat ≤0.5 参 VCE=5V 数 hFE ≥30 IC=0.5A IC=1A t

5.1. 3dk024e.pdf Size:152K _china

3DK023F

3DK024E 型 NPN 硅大功率开关晶体管 参数符号 测试条件 规范值 单位 PCM Ta=25℃ 5 W 极 ICM 2 A 限 Tjm 150 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=2mA ≥150 V V(BR)CEO ICE=2mA ≥150 V V(BR)EBO IEB=2mA ≥5.0 V ICBO VCB=150V ≤0.2 mA 直 VBEsat IC=1A ≤1.5 流 V IB=0.1A VCEsat ≤0.5 参 VCE=5V 数 hFE ≥30 IC=0.75A IC=1A tr

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 
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