3DK023F Specs and Replacement
Type Designator: 3DK023F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO18
3DK023F Substitution
- BJT ⓘ Cross-Reference Search
3DK023F datasheet
3DK023F NPN PCM Ta=25 1.0 W ICM 1.0 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=2mA 250 V V(BR)CEO ICE=2mA 200 V V(BR)EBO IEB=4mA 6.0 V ICBO VCB=140V 1 A VBEsat IC=750mA 1.2 V IB=75mA VCEsat 0.5 VCE=5V hFE 30 IC=0.5A IC=1A t... See More ⇒
Detailed specifications: 3DG9013, 3DG9014, 3DG930, 3DG945, 3DG945M, 3DK001, 3DK002, 3DK010, TIP31C, 3DK024E, 3DK030, 3DK050, 3DK10, 3DK100, 3DK101, 3DK102, 3DK103
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