3DK10 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DK10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3DK10 Transistor Equivalent Substitute - Cross-Reference Search
3DK10 Datasheet (PDF)
3dk10.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK10NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification circuit. 4. Quali
3dk103.pdf
3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1
3dk101.pdf
3DK101 NPN A B C PCM TC=25 200 mW ICM 40 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 30 20 V V(BR)CEO ICE=0.1mA 20 25 15 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A VB
3dk105.pdf
3DK105 NPN A B C D PCM TC=25 700 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=4V 1.0
3dk102.pdf
3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1
3dk106.pdf
3DK106 NPN A B C D PCM TC=25 700 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1.0
3dk108.pdf
3DK108 NPN A B C D PCM TC=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1
3dk100.pdf
3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs
3dk104h.pdf
3DK104H NPN PCM TC=25 700 mW ICM 400 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=4V 0.1 A VBEsat 0.9 IC=30mA V IB=3mA
3dk104.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma
3dk104b.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dk104d.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dk104f.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dk104c.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dk106.pdf
isc Silicon NPN Power Transistor 3DK106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , re
3dk104e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2904A
