All Transistors. 3DK14 Datasheet

 

3DK14 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK14

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DK14 Transistor Equivalent Substitute - Cross-Reference Search

 

3DK14 Datasheet (PDF)

1.1. 3dk14i.pdf Size:157K _china

3DK14

3DK14I 型 NPN 硅小功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 500 mW 极 ICM 300 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥160 V V(BR)CEO ICE=0.1mA ≥150 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤1.0 μA 直 ICEO VCE=10V ≤5.0 μA 流 参 IEBO VEB=4V ≤1.0 μA 数 VBEsat ≤1.0 IC=300mA V IB=3

1.2. 3dk14.pdf Size:171K _china

3DK14

3DK14 型 NPN 硅小功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 1000 mW 极 ICM 800 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥50 ≥60 ≥70 ≥50 ≥60 V V(BR)CEO ICE=0.1mA ≥40 ≥50 ≥60 ≥40 ≥50 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤1.0 μA 直 ICEO VCE=10V ≤5.0 μA 流 参 IEBO V

 

Datasheet: D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , D32S6 , D32S7 , BC547 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , D32W8 .

 
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