All Transistors. 3DK40B Datasheet

 

3DK40B Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK40B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

3DK40B Transistor Equivalent Substitute - Cross-Reference Search

 

3DK40B Datasheet (PDF)

1.1. 3dk40b.pdf Size:117K _china

3DK40B

3DK40B 型 NPN 硅大功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 225 W 极 ICM 15 A 限 Tjm 175 ℃ 值 Tstg -55~175 ℃ V(BR)CBO ICB=2mA ≥50 V V(BR)CEO ICE=2mA ≥50 V V(BR)EBO IEB=2mA ≥5.0 V 直 ICBO VCB=50V ≤1.5 mA 流 参 VBEsat ≤1.5 IC=10A V 数 IB=1A VCEsat ≤0.8 VCE=3V hFE ≥20 IC=10A 交 tr ≤0.9

5.1. 3dk402.pdf Size:201K _china

3DK40B

3DK402 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V RthJC 3 ℃/W IC=1.5A V(BR)CBO ICB=1mA ≥150 ≥220 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥150 ≥220 ≥250 ≥300 ≥350 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=20V ≤0.5 mA 直 流 ICEO

5.2. 3dk405.pdf Size:166K _china

3DK40B

3DK405 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM TC=25℃ 200 W ICM 30 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 0.75 ℃/W IC=5A V(BR)CBO ICB=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 ≥400 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 ≥400 V V(BR)EBO IEB=1mA ≥5.0 V ICBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 
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