PH1214-12M PDF and Equivalents Search

 

PH1214-12M Specs and Replacement

Type Designator: PH1214-12M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 47 W

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1.3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 8.5

Noise Figure, dB: -

Package: CERAMIC

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PH1214-12M datasheet

 ..1. Size:134K  macom

ph1214-12m.pdf pdf_icon

PH1214-12M

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 6.1. Size:140K  macom

ph1214-110m.pdf pdf_icon

PH1214-12M

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte... See More ⇒

 6.2. Size:140K  macom

ph1214-100el.pdf pdf_icon

PH1214-12M

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 7.1. Size:136K  macom

ph1214-40m.pdf pdf_icon

PH1214-12M

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

Detailed specifications: PH1090-350L, PH1090-55S, PH1090-700B, PH1090-75L, PH1113-100, PH1214-0.85L, PH1214-100EL, PH1214-110M, 431, PH1214-220M, PH1214-25L, PH1214-25M, PH1214-2M, PH1214-300M, PH1214-30EL, PH1214-3L, PH1214-40M

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