PH1214-2M PDF and Equivalents Search

 

PH1214-2M Specs and Replacement


   Type Designator: PH1214-2M
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 10.3 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: CERAMIC
 

 PH1214-2M Substitution

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PH1214-2M datasheet

 ..1. Size:137K  macom
ph1214-2m.pdf pdf_icon

PH1214-2M

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal... See More ⇒

 6.1. Size:143K  macom
ph1214-220m.pdf pdf_icon

PH1214-2M

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte... See More ⇒

 6.2. Size:133K  macom
ph1214-25m.pdf pdf_icon

PH1214-2M

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 6.3. Size:126K  macom
ph1214-25l.pdf pdf_icon

PH1214-2M

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

Detailed specifications: PH1113-100 , PH1214-0.85L , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M , PH1214-25L , PH1214-25M , D882P , PH1214-300M , PH1214-30EL , PH1214-3L , PH1214-40M , PH1214-55EL , PH1214-6M , PH1214-80M , PH1617-2 .

Keywords - PH1214-2M pdf specs

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