PH1214-3L Datasheet, Equivalent, Cross Reference Search

   Type Designator: PH1214-3L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 18.6 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5.7
   Noise Figure, dB: -
   Package: CERAMIC

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PH1214-3L Datasheet (PDF)

..1. Size:142K macom
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PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal in

6.1. Size:136K macom
ph1214-30el.pdf pdf_icon

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

6.2. Size:152K macom
ph1214-300m.pdf pdf_icon

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

7.1. Size:136K macom
ph1214-40m.pdf pdf_icon

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.2. Size:140K macom
ph1214-110m.pdf pdf_icon

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

7.3. Size:143K macom
ph1214-220m.pdf pdf_icon

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

7.4. Size:134K macom
ph1214-12m.pdf pdf_icon

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.5. Size:127K macom
ph1214-6m.pdf pdf_icon

PH1214-6M Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

7.6. Size:163K macom
ph1214-55el.pdf pdf_icon

PH1214-55EL Radar Pulsed Power Transistor M/A-COM Products 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

7.7. Size:133K macom
ph1214-25m.pdf pdf_icon

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.8. Size:137K macom
ph1214-2m.pdf pdf_icon

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

7.9. Size:138K macom
ph1214-80m.pdf pdf_icon

PH1214-80M Radar Pulsed Power Transistor M/A-COM Products 80W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.10. Size:140K macom
ph1214-100el.pdf pdf_icon

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.11. Size:126K macom
ph1214-25l.pdf pdf_icon

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

7.12. Size:156K macom
ph1214-0.85l.pdf pdf_icon

PH1214-0.85L Radar Pulsed Power Transistor M/A-COM Products 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common emitter configuration Broadband Class A operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

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PH1214-3L Datasheet, Equivalent, Cross Reference Search

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