PH2226-50M
Datasheet, Equivalent, Cross Reference Search
Type Designator: PH2226-50M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 159
W
Maximum Collector-Emitter Voltage |Vce|: 63
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 6
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 2550
MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: CERAMIC
PH2226-50M
Transistor Equivalent Substitute - Cross-Reference Search
PH2226-50M
Datasheet (PDF)
..1. Size:102K macom
ph2226-50m.pdf
PH2226-50M Radar Pulsed Power Transistor M/A-COM Products 50W, 2.2-2.6GHz, 100s Pulse, 10% Duty Released, 20 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna
7.1. Size:102K macom
ph2226-110m.pdf
PH2226-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.2-2.6GHz, 100s Pulse, 10% Duty Released, 22 Feb 08 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inter
9.1. Size:51K philips
ph2222a 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2222ANPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN switching transistor PH2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 baseAPPLICATIONS3 collector Switc
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