PH2729-65M pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

PH2729-65M Specs and Replacement

Type Designator: PH2729-65M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2900 MHz

Forward Current Transfer Ratio (hFE), MIN: 8.5

Noise Figure, dB: -

Package: CERAMIC

PH2729-65M Substitution

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PH2729-65M datasheet

..1. Size:105K macom

ph2729-65m.pdf pdf_icon

PH2729-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

7.1. Size:100K macom

ph2729-25m.pdf pdf_icon

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

7.2. Size:102K macom

ph2729-8.5m.pdf pdf_icon

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte... See More ⇒

7.3. Size:103K macom

ph2729-110m.pdf pdf_icon

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte... See More ⇒