PH2731-5M Datasheet and Replacement
Type Designator: PH2731-5M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3100 MHz
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: CERAMIC
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PH2731-5M Datasheet (PDF)
ph2731-5m.pdf

PH2731-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 2.7-3.1 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph2731-75l.pdf

PH2731-75L Radar Pulsed Power Transistor M/A-COM Products 75W, 2.7-3.1 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph2731-20m.pdf

PH2731-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 2.7-3.1 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT8255A | BC859W | AUY19-3 | JA100 | 2SD471 | AC138 | 2SC4370AP
Keywords - PH2731-5M transistor datasheet
PH2731-5M cross reference
PH2731-5M equivalent finder
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PH2731-5M replacement
History: KT8255A | BC859W | AUY19-3 | JA100 | 2SD471 | AC138 | 2SC4370AP



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