All Transistors. PH2856-160 Datasheet

 

PH2856-160 Datasheet and Replacement


   Type Designator: PH2856-160
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 700 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2856 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: CERAMIC
 

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PH2856-160 Datasheet (PDF)

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PH2856-160

PH2856-160 Radar Pulsed Power Transistor M/A-COM Products 160W, 2.856 GHz, 12s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

Datasheet: PH2729-110M , PH2729-130M , PH2729-25M , PH2729-65M , PH2729-8.5M , PH2731-20M , PH2731-5M , PH2731-75L , 2N3904 , PH2931-20M , PH3134-10M , PH3134-20L , PH3134-25M , PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M .

History: DTA403 | 2SD668 | RN4989 | 2SC2258O | MP4917 | TMPC1009F4 | CST1745

Keywords - PH2856-160 transistor datasheet

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