PH2856-160 Datasheet. Specs and Replacement

Type Designator: PH2856-160  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 700 W

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2856 MHz

Forward Current Transfer Ratio (hFE), MIN: 7.5

Noise Figure, dB: -

Package: CERAMIC

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PH2856-160 datasheet

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PH2856-160

PH2856-160 Radar Pulsed Power Transistor M/A-COM Products 160W, 2.856 GHz, 12 s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal... See More ⇒

Detailed specifications: PH2729-110M, PH2729-130M, PH2729-25M, PH2729-65M, PH2729-8.5M, PH2731-20M, PH2731-5M, PH2731-75L, BC548, PH2931-20M, PH3134-10M, PH3134-20L, PH3134-25M, PH3134-30S, PH3134-55L, PH3134-65M, PH3135-20M

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