All Transistors. PH3134-10M Datasheet

 

PH3134-10M Datasheet and Replacement


   Type Designator: PH3134-10M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: CERAMIC
 

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PH3134-10M Datasheet (PDF)

 ..1. Size:99K  macom
 ph3134-10m.pdf pdf_icon

PH3134-10M

PH3134-10M Radar Pulsed Power Transistor M/A-COM Products 10W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:94K  macom
 ph3134-30s.pdf pdf_icon

PH3134-10M

PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
 ph3134-55l.pdf pdf_icon

PH3134-10M

PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.3. Size:95K  macom
 ph3134-65m.pdf pdf_icon

PH3134-10M

PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Keywords - PH3134-10M transistor datasheet

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