2N917 Datasheet. Specs and Replacement

Type Designator: 2N917

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

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2N917 datasheet

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2N917

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N917 TO-72 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 15 V VEBO Emitter Base Voltage 3V IC Collector Current - Continuous 50 mA PD Power Dissipation @ TA=... See More ⇒

Detailed specifications: 2N914-46, 2N914-51, 2N914A, 2N915, 2N915A, 2N916, 2N916A, 2N916B, 2N5401, 2N917-46, 2N917-51, 2N917A, 2N918, 2N918-46, 2N918-51, 2N918ACSM, 2N918AQF

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