All Transistors. PH3135-90S Datasheet

 

PH3135-90S Datasheet and Replacement


   Type Designator: PH3135-90S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 580 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 10.7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: CERAMIC
      - BJT Cross-Reference Search

   

PH3135-90S Datasheet (PDF)

 ..1. Size:94K  macom
ph3135-90s.pdf pdf_icon

PH3135-90S

PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:95K  macom
ph3135-25s.pdf pdf_icon

PH3135-90S

PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:101K  macom
ph3135-65m.pdf pdf_icon

PH3135-90S

PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.3. Size:101K  macom
ph3135-5m.pdf pdf_icon

PH3135-90S

PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: LDTD123YLT1G | MJ802G | 2T3309A | 2SC5302 | 2SC381 | SQ3960F | 2SD189

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