PHPT60410PY Datasheet. Specs and Replacement

Type Designator: PHPT60410PY  📄📄 

SMD Transistor Code: 0410PAB

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 97 MHz

Collector Capacitance (Cc): 84 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT669

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PHPT60410PY datasheet

 ..1. Size:245K  nxp

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PHPT60410PY

PHPT60410PY 40 V, 10 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60410NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

 5.1. Size:233K  nxp

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PHPT60410PY

PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60410PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print... See More ⇒

 6.1. Size:243K  nxp

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PHPT60410PY

PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60415PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

 6.2. Size:243K  nxp

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PHPT60410PY

PHPT60415PY 40 V, 15 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60415NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

Detailed specifications: PH3135-20M, PH3135-25S, PH3135-5M, PH3135-65M, PH3135-90S, PHPT60406NY, PHPT60406PY, PHPT60410NY, A1941, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY, PHPT60606PY, PHPT60610NY, PHPT60610PY

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