All Transistors. 2N917-51 Datasheet

 

2N917-51 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N917-51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO51

 2N917-51 Transistor Equivalent Substitute - Cross-Reference Search

   

2N917-51 Datasheet (PDF)

 9.1. Size:135K  cdil
 2n917.pdf

2N917-51 2N917-51

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N917TO-72Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 15 VVEBOEmitter Base Voltage 3VICCollector Current - Continuous 50 mAPDPower Dissipation @ TA=

Datasheet: 2N914A , 2N915 , 2N915A , 2N916 , 2N916A , 2N916B , 2N917 , 2N917-46 , A1941 , 2N917A , 2N918 , 2N918-46 , 2N918-51 , 2N918ACSM , 2N918AQF , 2N918CSM , 2N918UB .

 

 
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