2N917-51 Datasheet. Specs and Replacement
Type Designator: 2N917-51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO51
2N917-51 Substitution
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2N917-51 datasheet
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N917 TO-72 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 15 V VEBO Emitter Base Voltage 3V IC Collector Current - Continuous 50 mA PD Power Dissipation @ TA=... See More ⇒
Detailed specifications: 2N914A, 2N915, 2N915A, 2N916, 2N916A, 2N916B, 2N917, 2N917-46, BC548, 2N917A, 2N918, 2N918-46, 2N918-51, 2N918ACSM, 2N918AQF, 2N918CSM, 2N918UB
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