All Transistors. PHPT61010PY Datasheet

 

PHPT61010PY Datasheet and Replacement


   Type Designator: PHPT61010PY
   SMD Transistor Code: 1010PAB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 101 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT669
      - BJT Cross-Reference Search

   

PHPT61010PY Datasheet (PDF)

 ..1. Size:230K  nxp
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PHPT61010PY

PHPT61010PY100 V, 10 A PNP high power bipolar transistor20 March 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61010NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 5.1. Size:233K  nxp
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PHPT61010PY

PHPT61010NY100 V, 10 A NPN high power bipolar transistor20 March 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61010PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 7.1. Size:230K  nxp
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PHPT61010PY

PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 7.2. Size:228K  nxp
phpt61006py.pdf pdf_icon

PHPT61010PY

PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | BDX13-4 | DTA123EET1G | ESM2060 | MP602 | 2SC3562 | MP5857

Keywords - PHPT61010PY transistor datasheet

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