PMBT4401YS
Datasheet, Equivalent, Cross Reference Search
Type Designator: PMBT4401YS
SMD Transistor Code: BG*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.55
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.6
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 8
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT363
PMBT4401YS
Transistor Equivalent Substitute - Cross-Reference Search
PMBT4401YS
Datasheet (PDF)
..1. Size:255K nxp
pmbt4401ys.pdf
PMBT4401YS40 V, 600 mA, double NPN switching transistor2 July 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT4403YS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V A
6.1. Size:124K philips
pmbt4401.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT4401NPN switching transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Industrial
6.2. Size:52K philips
pmbt4401 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT4401NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Ind
6.3. Size:331K nxp
pmbt4401.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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