PMBTA44
Datasheet, Equivalent, Cross Reference Search
Type Designator: PMBTA44
SMD Transistor Code: W3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 500
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20
MHz
Collector Capacitance (Cc): 7
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
SOT23
PMBTA44
Transistor Equivalent Substitute - Cross-Reference Search
PMBTA44
Datasheet (PDF)
..1. Size:96K philips
pmbta44.pdf
PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua
..2. Size:96K nxp
pmbta44.pdf
PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua
8.1. Size:47K philips
pmbta42 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA42NPN high-voltage transistor1999 Apr 22Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector
8.2. Size:199K philips
pmbta42.pdf
PMBTA42300 V, 100 mA NPN high-voltage transistorRev. 05 12 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PMBTA92.1.2 Features High voltage (max. 300 V)1.3 Applications Telephony and professional communication equipment1.4 Qui
8.3. Size:74K philips
pmbta42ds.pdf
PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:
8.4. Size:144K philips
pmbta45.pdf
PMBTA45500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistorRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9050T.1.2 Features and benefits High voltage Low collector
8.5. Size:318K nxp
pmbta42.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.6. Size:74K nxp
pmbta42ds.pdf
PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:
8.7. Size:260K nxp
pmbta45.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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