All Transistors. PNT23T503E0-2 Datasheet

 

PNT23T503E0-2 Datasheet, Equivalent, Cross Reference Search


   Type Designator: PNT23T503E0-2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 11 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23

 PNT23T503E0-2 Transistor Equivalent Substitute - Cross-Reference Search

   

PNT23T503E0-2 Datasheet (PDF)

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pnt23t503e0-2.pdf

PNT23T503E0-2
PNT23T503E0-2

PNT23T503E0-2 High EB High DC gain Ultra-Small package switch transistorFeature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector Package: SOT-23 1 - Base Emitter -Base Breakdown Voltage 11V High DC current gain typical 380 Low Saturation Voltage 80mv 0.15 continuous collector current 2 - Emitter NPN switch transisto

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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