All Transistors. PNT23T503E0-2 Datasheet

 

PNT23T503E0-2 Datasheet and Replacement


   Type Designator: PNT23T503E0-2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 11 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23
 

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PNT23T503E0-2 Datasheet (PDF)

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PNT23T503E0-2

PNT23T503E0-2 High EB High DC gain Ultra-Small package switch transistorFeature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector Package: SOT-23 1 - Base Emitter -Base Breakdown Voltage 11V High DC current gain typical 380 Low Saturation Voltage 80mv 0.15 continuous collector current 2 - Emitter NPN switch transisto

Datasheet: PN200A , PN2222AG , PN2222ARLRAG , PN2222ARLRMG , PN2222ARLRPG , PN2222-H , PN2222-L , PN4209 , A1015 , PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 .

History: KSD1616-L | 2SCR573D3

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