All Transistors. PNT23T503E0-2 Datasheet

 

PNT23T503E0-2 Datasheet, Equivalent, Cross Reference Search

Type Designator: PNT23T503E0-2

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 11 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT23

PNT23T503E0-2 Transistor Equivalent Substitute - Cross-Reference Search

 

PNT23T503E0-2 Datasheet (PDF)

1.1. pnt23t503e0-2.pdf Size:122K _upd

PNT23T503E0-2
PNT23T503E0-2

 PNT23T503E0-2 High EB High DC gain Ultra-Small package switch transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector  Package: SOT-23 1 - Base  Emitter -Base Breakdown Voltage 11V  High DC current gain typical 380  Low Saturation Voltage 80mv  0.15 continuous collector current 2 - Emitter  NPN switch transisto

Datasheet: 2SA1577 , 2SA1578 , 2SA1579N , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , BD139 , 2SA1580-5 , 2SA1581 , 2SA1582 , 2SA1583 , 2SA1584 , 2SA1585 , 2SA1586G , 2SA1586O .

 
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