PNT23T503E0-2 Datasheet, Equivalent, Cross Reference Search
Type Designator: PNT23T503E0-2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT23
PNT23T503E0-2 Transistor Equivalent Substitute - Cross-Reference Search
PNT23T503E0-2 Datasheet (PDF)
..1. Size:122K prisemi
pnt23t503e0-2.pdf
pnt23t503e0-2.pdf
PNT23T503E0-2 High EB High DC gain Ultra-Small package switch transistorFeature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector Package: SOT-23 1 - Base Emitter -Base Breakdown Voltage 11V High DC current gain typical 380 Low Saturation Voltage 80mv 0.15 continuous collector current 2 - Emitter NPN switch transisto
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
