All Transistors. PT23T2907A Datasheet

 

PT23T2907A Datasheet, Equivalent, Cross Reference Search

Type Designator: PT23T2907A

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

PT23T2907A Transistor Equivalent Substitute - Cross-Reference Search

 

PT23T2907A Datasheet (PDF)

1.1. pt23t2907a.pdf Size:132K _upd

PT23T2907A
PT23T2907A

 PT23T2907A Transistor Feature 3 - Collector 1 - Base  PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Absolute maximum rating@25℃

4.1. pt23t2222a.pdf Size:125K _upd

PT23T2907A
PT23T2907A

 PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3  High current (max. 600 mA)  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements 1 2  Pure tin plating: 7 ~ 17 um Fig.1 S

5.1. pt23t9014.pdf Size:125K _upd

PT23T2907A
PT23T2907A

 PT23T9014 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.2. pt23t3904.pdf Size:121K _upd

PT23T2907A
PT23T2907A

 PT23T3904 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.3. pt23t8050.pdf Size:113K _upd

PT23T2907A
PT23T2907A

 PT23T8050 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.4. pt23t9013.pdf Size:125K _upd

PT23T2907A
PT23T2907A

 PT23T9013 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.5. pt23t3906.pdf Size:122K _upd

PT23T2907A
PT23T2907A

 PT23T3906 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.6. pt23t8550.pdf Size:113K _upd

PT23T2907A
PT23T2907A

 PT23T8550 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.7. pt23t5401.pdf Size:112K _upd

PT23T2907A
PT23T2907A

 PT23T5401 Transistor Feature 3 - Collector 1 - Base  PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Absolute maximum rating@25℃ P

5.8. pt23t5551.pdf Size:113K _upd

PT23T2907A
PT23T2907A

 PT23T5551 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

Datasheet: PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , MJE13003 , PT23T3904 , PT23T3906 , PT23T5401 , PT23T5551 , PT23T8050 , PT23T8550 , PT23T9013 , PT23T9014 .

 


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