All Transistors. PT23T5551 Datasheet

 

PT23T5551 Datasheet, Equivalent, Cross Reference Search

Type Designator: PT23T5551

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

PT23T5551 Transistor Equivalent Substitute - Cross-Reference Search

PT23T5551 Datasheet (PDF)

1.1. pt23t5551.pdf Size:113K _upd

PT23T5551
PT23T5551

 PT23T5551 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

4.1. pt23t5401.pdf Size:112K _upd

PT23T5551
PT23T5551

 PT23T5401 Transistor Feature 3 - Collector 1 - Base  PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Absolute maximum rating@25℃ P

5.1. pt23t9014.pdf Size:125K _upd

PT23T5551
PT23T5551

 PT23T9014 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.2. pt23t3904.pdf Size:121K _upd

PT23T5551
PT23T5551

 PT23T3904 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.3. pt23t8050.pdf Size:113K _upd

PT23T5551
PT23T5551

 PT23T8050 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.4. pt23t9013.pdf Size:125K _upd

PT23T5551
PT23T5551

 PT23T9013 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.5. pt23t2222a.pdf Size:125K _upd

PT23T5551
PT23T5551

 PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3  High current (max. 600 mA)  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements 1 2  Pure tin plating: 7 ~ 17 um Fig.1 S

5.6. pt23t2907a.pdf Size:132K _upd

PT23T5551
PT23T5551

 PT23T2907A Transistor Feature 3 - Collector 1 - Base  PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Absolute maximum rating@25℃

5.7. pt23t3906.pdf Size:122K _upd

PT23T5551
PT23T5551

 PT23T3906 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

5.8. pt23t8550.pdf Size:113K _upd

PT23T5551
PT23T5551

 PT23T8550 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

Datasheet: PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 , TIP122 , PT23T8050 , PT23T8550 , PT23T9013 , PT23T9014 , PT9730 , PT9731 , PT9732 , PT9734 .

 


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BJT: PT9790 | PT9734 | PT9732 | PT9731 | PT9730 | PT23T9014 | PT23T9013 | PT23T8550 | PT23T8050 | PT23T5551 | PT23T5401 | PT23T3906 | PT23T3904 | PT23T2907A | PT23T2222A | PT236T30E2M | PT236T30E2H | PT236T30E2 | PQMD12 | PPT8N30E2 |