All Transistors. PT23T8050 Datasheet

 

PT23T8050 Datasheet, Equivalent, Cross Reference Search


   Type Designator: PT23T8050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 PT23T8050 Transistor Equivalent Substitute - Cross-Reference Search

   

PT23T8050 Datasheet (PDF)

 ..1. Size:113K  prisemi
pt23t8050.pdf

PT23T8050
PT23T8050

PT23T8050 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 8.1. Size:113K  prisemi
pt23t8550.pdf

PT23T8050
PT23T8050

PT23T8550 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 9.1. Size:132K  prisemi
pt23t2907a.pdf

PT23T8050
PT23T8050

PT23T2907A Transistor Feature 3 - Collector 1 - Base PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Absolute maximum rating@25

 9.2. Size:113K  prisemi
pt23t5551.pdf

PT23T8050
PT23T8050

PT23T5551 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 9.3. Size:112K  prisemi
pt23t5401.pdf

PT23T8050
PT23T8050

PT23T5401 Transistor Feature 3 - Collector 1 - Base PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Absolute maximum rating@25 P

 9.4. Size:122K  prisemi
pt23t3906.pdf

PT23T8050
PT23T8050

PT23T3906 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 9.5. Size:153K  prisemi
pt23t3904.pdf

PT23T8050
PT23T8050

PT23T3904 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structure NPN epita

 9.6. Size:125K  prisemi
pt23t9014.pdf

PT23T8050
PT23T8050

PT23T9014 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 9.7. Size:125K  prisemi
pt23t9013.pdf

PT23T8050
PT23T8050

PT23T9013 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

 9.8. Size:125K  prisemi
pt23t2222a.pdf

PT23T8050
PT23T8050

PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3 High current (max. 600 mA) Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements 1 2 Pure tin plating: 7 ~ 17 um Fig.1 S

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: D38S10 | BCP53-16T

 

 
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