2N1132CSM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1132CSM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: LCC1
2N1132CSM Transistor Equivalent Substitute - Cross-Reference Search
2N1132CSM Datasheet (PDF)
1.1. 2n1132csm.pdf 
Size:41K _upd
2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES 1.02 ± 0.10 0.51 ± 0.10 (0.04 ± 0.004) (0.02 ± 0.004) 0.31 (0.012)rad. • SILICON PNP TRANSISTOR. • HIGH SPEED SWITCHING 3 • SCREENING OPTIONS AVAILABLE 2 1 1.91 ± 0.10 APPLICATIONS (0.075 ± 0.004) 1.40 0.31 rad. (0.055) (0.012) 3.05 ±
4.1. 2n1132l.pdf Size:128K _upd
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1132 JAN 2N1131L 2N1132L JANTX JANTXV ABSOL
4.2. 2n1132dcsm.pdf Size:10K _upd
2N1132DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 50V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.0
Datasheet: D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .
