2N2907AC3B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2907AC3B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: LCC3
2N2907AC3B Transistor Equivalent Substitute - Cross-Reference Search
2N2907AC3B Datasheet (PDF)
2n2907ac3b.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac3a.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac3c.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907acsmcecc.pdf
2N2907ACSMSEMELABHIGH SPEED, MEDIUM POWER, PNPSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31rad.(0.012)TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CE
2n2907ac1a.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac1b.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907acsm4r.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V
2n2907acecc.pdf
2N2907ACECCDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.6A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
