2N3637L Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3637L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO5
2N3637L Transistor Equivalent Substitute - Cross-Reference Search
2N3637L Datasheet (PDF)
2n3637l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN2N3634L 2N3635L 2N3636L 2
2n3637dcsm.pdf
2N3637DCSMMECHANICAL DATADUAL PNP SILICON TRANSISTORSDimensions in mm (inches)IN A HERMETICALLY SEALEDCERAMIC SURFACE MOUNTPACKAGE FOR HIGH RELIABILITYAPPLICATIONS1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 3 High Voltage Switching14A Low Power Amplifier Applications0.236 5rad.(0.009) Herme
2n3637csm.pdf
2N3637CSMMECHANICAL DATAPNP SILICON TRANSISTOR IN ADimensions in mm (inches)HERMETICALLY SEALED CERAMICSURFACE MOUNT PACKAGE FORHIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)3FEATURES21 High Voltage Switching Low Power Amplifier Applications1.91 0.10(0.075 0.004)A0.31rad. Hermetic Ceramic Surface Mount(0.012)
2n3634 2n3635 2n3636 2n3637.pdf
Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
2n3637ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
