2N930-51 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N930-51
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO51
2N930-51 Transistor Equivalent Substitute - Cross-Reference Search
2N930-51 Datasheet (PDF)
2n930 2n930ub.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/253L completed by 7 July 2011. 7 April 2011 SUPERSEDING MIL-PRF-19500/253K 3 July 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC, JANSM,
2n930 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS 2N9302N930ATO-18Metal Can PackageLow Noise TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N930 2N930A UNITVCEOCollector Emitter Voltage 45 60 VVCBOCollector Base Voltage 45 60 VVEBOEmitter Base Voltage 5 6 VICCollector Current Continuous
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
