All Transistors. 2N3868SMD Datasheet

 

2N3868SMD Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3868SMD
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 1 A
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO276AB

 2N3868SMD Transistor Equivalent Substitute - Cross-Reference Search

   

2N3868SMD Datasheet (PDF)

 ..1. Size:10K  semelab
 2n3868smd.pdf

2N3868SMD

2N3868SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 1A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 0.1. Size:10K  semelab
 2n3868smd05.pdf

2N3868SMD

2N3868SMD05Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 7.1. Size:1098K  no
 2n3868s.pdf

2N3868SMD 2N3868SMD

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 8.1. Size:1098K  no
 2n3868u4.pdf

2N3868SMD 2N3868SMD

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 8.2. Size:153K  cdil
 2n3868.pdf

2N3868SMD 2N3868SMD

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can PackageDesigned for High Speed, Medium Current Switching and High Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 60 VVCBOCollector Base Voltage 60 VVEBO

 8.3. Size:56K  microsemi
 2n3868.pdf

2N3868SMD 2N3868SMD

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3868APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min)Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2979DCSM

 

 
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