2N3868U4 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3868U4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
2N3868U4 Transistor Equivalent Substitute - Cross-Reference Search
2N3868U4 Datasheet (PDF)
2n3868u4.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
2n3868s.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is
2n3868smd05.pdf
2N3868SMD05Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3868smd.pdf
2N3868SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 1A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3868.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can PackageDesigned for High Speed, Medium Current Switching and High Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 60 VVCBOCollector Base Voltage 60 VVEBO
2n3868.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3868APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min)Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
