2N5052SMD Specs and Replacement
Type Designator: 2N5052SMD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 2 A
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO-276AB
2N5052SMD Substitution
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2N5052SMD datasheet
2N5052SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute ma... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolut... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5010S, 2N5011S, 2N5012S, 2N5013S, 2N5014S, 2N5015SX, 2N5015X, 2N5038G, BC549, 2N5087G, 2N5087RLRAG, 2N5088G, 2N5089G, 2N5151-220M, 2N5151SMD05, 2N5151U3, 2N5151XSMD05
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