2N5153SMD05 Specs and Replacement
Type Designator: 2N5153SMD05
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5.5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-276AA
2N5153SMD05 Substitution
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2N5153SMD05 datasheet
2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S... See More ⇒
2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 C to +200 C range SMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristics Figure 1. Internal schematic diagram ESCC qualified European preferr... See More ⇒
2n5151 2n5152 2n5153 2n5154.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5151U3, 2N5151XSMD05, 2N5152A, 2N5152SMD, 2N5152SMD05, 2N5152U3, 2N5153HR, 2N5153SMD, MJE350, 2N5153U3, 2N5154HR, 2N5154N1B, 2N5154N2A, 2N5154SMD05, 2N5154T2A, 2N5154U3, 2N5154X
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