2N5153U3 Datasheet and Replacement
Type Designator: 2N5153U3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5.5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: U-3
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2N5153U3 Datasheet (PDF)
2n5153u3.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te
2n5153hr.pdf

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr
2n5151 2n5152 2n5153 2n5154.pdf

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2n5153smd.pdf

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CMBT3905 | FX5127 | STA475A | AF101BL | 2SB1204S | ECG267 | DRA4123Y
Keywords - 2N5153U3 transistor datasheet
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History: CMBT3905 | FX5127 | STA475A | AF101BL | 2SB1204S | ECG267 | DRA4123Y



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