All Transistors. 2N5320X Datasheet

 

2N5320X Datasheet and Replacement


   Type Designator: 2N5320X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO39
 

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2N5320X Datasheet (PDF)

 ..1. Size:59K  semelab
2n5320x.pdf pdf_icon

2N5320X

2N5320X SMALL SIGNAL SILICON NPN MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)6.10 (0.240)FEATURES 6.60 (0.260) SILICON NPN TRANSISTOR 0.89(0.035)max. METAL CASE (JEDEC TO-39) 12.70(0.500) 0.41 (0.016)min.0.53 (0.021) HIGH SPEED SATURATED SWITCHING dia.5.08 (0.200)typ.2.542(0.100)

 8.1. Size:44K  st
2n5320.pdf pdf_icon

2N5320X

2N5320SMALL SIGNAL NPN TRANSISTORDESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary PNP type is the 2N5322TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collecto

 8.2. Size:67K  st
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2N5320X

2N53202N5321SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPNTRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND2N5323DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxialplanar NPN transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl

 8.3. Size:110K  central
2n5320 2n5321 2n5322 2n5323.pdf pdf_icon

2N5320X

DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C

Datasheet: 2N5190G , 2N5191G , 2N5192G , 2N5194G , 2N5195G , 2N5237S , 2N5238S , 2N5302G , 13007 , 2N5338LCC4 , 2N5339LCC4 , 2N5339U3 , 2N5401CSM , 2N5401DCSM , 2N5401G , 2N5401HR , 2N5401N .

History: KSC1983 | MD918HX

Keywords - 2N5320X transistor datasheet

 2N5320X cross reference
 2N5320X equivalent finder
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