All Transistors. 2N5416U4 Datasheet

 

2N5416U4 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5416U4

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-5

2N5416U4 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5416U4 Datasheet (PDF)

0.1. 2n5416u4.pdf Size:934K _no

2N5416U4
2N5416U4

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

7.1. 2n5416ua.pdf Size:934K _no

2N5416U4
2N5416U4

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

 8.1. 2n5415 2n5416 cnv 2.pdf Size:51K _philips

2N5416U4
2N5416U4

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m

8.2. 2n5415 2n5416.pdf Size:51K _philips

2N5416U4
2N5416U4

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m

 8.3. 2n5415 2n5416 .pdf Size:47K _st

2N5416U4
2N5416U4

2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching

8.4. 2n5415 2n5416.pdf Size:45K _st

2N5416U4
2N5416U4

2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching

 8.5. 2n5415 2n5416 2.pdf Size:64K _central

2N5416U4

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

8.6. 2n5416s.pdf Size:934K _no

2N5416U4
2N5416U4

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

8.7. 2n5415 2n5416.pdf Size:140K _cdil

2N5416U4
2N5416U4

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emitter Voltage

8.8. 3ca5416 2n5416.pdf Size:111K _china

2N5416U4

3CA5416(2N5416) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A IEBO VEB=6V 20 A IC=0.05A VCEsat 2.5 V IB=0.

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top