2N5784SMD05 Datasheet. Specs and Replacement

Type Designator: 2N5784SMD05  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 3.5 A

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO276AA

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2N5784SMD05 datasheet

 ..1. Size:10K  semelab

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2N5784SMD05

2N5784SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he... See More ⇒

 5.1. Size:10K  semelab

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2N5784SMD05

2N5784SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒

 8.1. Size:18K  semelab

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2N5784SMD05

2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) SILICON EPITAXIAL 8.51 (0.335) NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. General purpose power transistor for 8.51 (0.335) dia. switching and linear applications in a hermetic TO 39 package. 5.08 (0.200) typ. 2.54 2 (0.100)... See More ⇒

Detailed specifications: 2N5686G, 2N5777, 2N5778, 2N5779, 2N5780, 2N5781XL, 2N5782L, 2N5784SMD, 13005, 2N5785N1, 2N5785SMD, 2N5785SMD05, 2N5786L, 2N5794U, 2N5794UC, 2N5796U, 2N5883G

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