2N5886G Datasheet. Specs and Replacement
Type Designator: 2N5886G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO204AA
2N5886G Substitution
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2N5886G datasheet
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC... See More ⇒
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC... See More ⇒
2n5883 2n5884 2n5885 2n5886.pdf ![]()
Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated ... See More ⇒
2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN TO-3 power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplif... See More ⇒
Detailed specifications: 2N5785SMD05, 2N5786L, 2N5794U, 2N5794UC, 2N5796U, 2N5883G, 2N5884G, 2N5885G, 2SA1015, 2N6034G, 2N6035G, 2N6036G, 2N6038G, 2N6039G, 2N6040G, 2N6042G, 2N6043G
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