All Transistors. 2N6107G Datasheet

 

2N6107G Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6107G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220

 2N6107G Transistor Equivalent Substitute - Cross-Reference Search

   

2N6107G Datasheet (PDF)

 ..1. Size:241K  onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf

2N6107G
2N6107G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 ..2. Size:102K  onsemi
2n6109g 2n6109g 2n6107g.pdf

2N6107G
2N6107G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 ..3. Size:102K  onsemi
2n6107g.pdf

2N6107G
2N6107G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 8.1. Size:149K  motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf

2N6107G
2N6107G

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

 8.2. Size:48K  st
2n6107 2n6111.pdf

2N6107G
2N6107G

2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications

 8.3. Size:70K  central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

2N6107G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.4. Size:241K  onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N6107G
2N6107G

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 8.5. Size:101K  bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

2N6107G
2N6107G

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

 8.6. Size:95K  cdil
2n6107 2n6292.pdf

2N6107G
2N6107G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

 8.7. Size:198K  inchange semiconductor
2n6107.pdf

2N6107G
2N6107G

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6107DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Complement to Type 2N6292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicati

 8.8. Size:121K  inchange semiconductor
2n6107 2n6109 2n6111.pdf

2N6107G
2N6107G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top