2N6301SMD Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6301SMD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO276AB
2N6301SMD Transistor Equivalent Substitute - Cross-Reference Search
2N6301SMD Datasheet (PDF)
2n6299smd05 2n6299smd 2n6301smd 2n6301smd05.pdf
2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general
2n6301smd05.pdf
2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general
2n6300 2n6301.pdf
NPN Darlington Power Silicon Transistor2N6300 & 2N6301Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N6300 2N6301 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 60 80 VdcEmitter - Base Voltage VEBO 5.0 VdcBase Current IB 120 mAdcCollector Current IC 8.0 AdcTot
2n6300 2n6301.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
