All Transistors. 2SCR293PFRA Datasheet

 

2SCR293PFRA Datasheet and Replacement


   Type Designator: 2SCR293PFRA
   SMD Transistor Code: NV
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: SOT89
 

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2SCR293PFRA Datasheet (PDF)

 ..1. Size:1312K  rohm
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2SCR293PFRA

2SCR293P2SCR293PFRADatasheetNPN 1.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase Collector IC1.0AEmitter 2SCR293PFRA2SAR293P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR293P2SAR293PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS

 6.1. Size:478K  rohm
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2SCR293PFRA

Midium Power Transistors (30V / 1A) 2SCR293P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorMPT3(SC-63) FeaturesLow saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)(1) Base Applications(2) CollectorAbbreviated symbol : NV(3) EmitterDriver Packaging specifications Inner circuit (U

 6.2. Size:1440K  rohm
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2SCR293PFRA

2SCR293P5DatasheetMiddle Power Transistors (30V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC1AMPT3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary PNP Types : 2SAR293P5.3) Low VCE(sat)VCE(sat)=350mV(Max.).(IC/IB=500mA/25mA)lApplicationlLOW FREQUENCY AMPLIFIER,

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: HE8550 | DTL1652

Keywords - 2SCR293PFRA transistor datasheet

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