2SCR572D Specs and Replacement
Type Designator: 2SCR572D
SMD Transistor Code: CR572
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO252
- BJT ⓘ Cross-Reference Search
2SCR572D datasheet
..1. Size:787K rohm
2scr572d.pdf 
2SCR572D Datasheet NPN 5.0A 30V Middle Power Transistor lOutline l Parameter Value CPT VCEO 30V IC 5A 2SCR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR572D. 3) Low VCE(sat) VCE(sat)=0.40V(Max.). (IC/IB=2A/100mA) 4) Lead Free/R... See More ⇒
..2. Size:212K inchange semiconductor
2scr572d.pdf
isc Silicon NPN Power Transistor 2SCR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.4V@(I =2A,I =0.1A) CE(sat) C B Complementary NPN types 2SAR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
0.1. Size:1019K rohm
2scr572d3fra.pdf
2SCR572D3 FRA Datasheet NPN 5.0A 30V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3 FRA. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLI... See More ⇒
0.2. Size:1654K rohm
2scr572d3.pdf
2SCR572D3 NPN 5.0A 30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificati... See More ⇒
8.1. Size:791K rohm
2scr574da07.pdf
2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D A07 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead... See More ⇒
8.2. Size:789K rohm
2scr574d.pdf
2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro... See More ⇒
8.3. Size:792K rohm
2scr573d.pdf
2SCR573D Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro... See More ⇒
8.4. Size:1014K rohm
2scr574d3fra.pdf
2SCR574D3 FRA Datasheet NPN 2.0A 80V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 80V IC 2A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR574D3 FRA. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIF... See More ⇒
8.5. Size:1681K rohm
2scr573d3.pdf
2SCR573D3 Datasheet NPN 3.0A 50V Power Transistor lOutline l Parameter Value DPAK VCEO 50V IC 3A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR573D3. 3) Low VCE(sat) VCE(sat)=350mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificatio... See More ⇒
8.6. Size:796K rohm
2scr573da08.pdf
2SCR573D A08 Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D A08 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead... See More ⇒
8.7. Size:213K inchange semiconductor
2scr574d.pdf
isc Silicon NPN Power Transistor 2SCR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.3V(max)@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.8. Size:213K inchange semiconductor
2scr573d.pdf
isc Silicon NPN Power Transistor 2SCR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.35V@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
Detailed specifications: 2SCR542F3, 2SCR542PFRA, 2SCR544PFRA, 2SCR552PFRA, 2SCR553PFRA, 2SCR553R, 2SCR554PFRA, 2SCR562F3, 2N4401, 2SCR573D, 2SCR573DA08, 2SCR574D, 2SCR574DA07, 10AM20, 12A02CH-TL-E, 12A02MH-TL-E, 15C01C-TB-E
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