All Transistors. 15C01C-TB-E Datasheet

 

15C01C-TB-E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 15C01C-TB-E
   SMD Transistor Code: YP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 330 MHz
   Collector Capacitance (Cc): 3.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT23

 15C01C-TB-E Transistor Equivalent Substitute - Cross-Reference Search

   

15C01C-TB-E Datasheet (PDF)

 8.1. Size:28K  sanyo
15c01c.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : ENN750415C01CNPN Epitaxial Planar Silicon Transistor15C01CLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2018B[15C01C]Features Large current capacitance.0.40.163 Low collector-to-emitter saturation voltage (resistance).RCE (sat) typ.=0.58 [IC=0.7A

 8.2. Size:210K  onsemi
15c01c.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : EN7504A15C01CBipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat NPN Single CPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small

 9.1. Size:44K  sanyo
15c01m.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : ENN750515C01MNPN Epitaxial Planar Silicon Transistor15C01MLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2059B[15C01M]Features Large current capacitance.0.30.153 Low collector-to-emitter saturation voltage (resistance).0 to 0.1RCE (sat) typ.=0.58

 9.2. Size:96K  sanyo
15c01ss.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : ENN750815C01SSNPN Epitaxial Planar Silicon Transistor15C01SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, muting circuit.unit : mm2159A[15C01SS]FeaturesTop View Side View Large current capacitance.1.4 Low collector-to-emitter saturation voltage (resistance).0.10.25RCE (s

 9.3. Size:216K  onsemi
15c01m.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : EN7505A15C01MBipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat NPN Single MCPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Smal

 9.4. Size:501K  onsemi
15c01ss.pdf

15C01C-TB-E
15C01C-TB-E

Ordering number : EN7508A15C01SSBipolar Transistorhttp://onsemi.com( )15V, 0.6A, Low VCE sat NPN Single SSFPApplications Low-frequency Amplifier, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=0.58 [IC=0.7A, IB=35mA] Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Small ON

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KFW16A

 

 
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