1D500A-030 Specs and Replacement
Type Designator: 1D500A-030
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2500 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 500 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: BBTIV
1D500A-030 Substitution
- BJT ⓘ Cross-Reference Search
1D500A-030 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 15GN01MA, 15GN01MA-TL-E, 15GN03CA, 15GN03CA-TB-E, 15GN03FA, 15GN03FA-TL-H, 15GN03MA, 15GN03MA-TL-E, MJE350, 1DI200A-120, 1DI200E-055, 1DI200K-055, 1DI200Z-100, 1DI300D-100, 1DI300Z-120, 1DI30MA-050, 1DI400A-120
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