1DI300D-100 Specs and Replacement
Type Designator: 1DI300D-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2000 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 300 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M105
1DI300D-100 Substitution
- BJT ⓘ Cross-Reference Search
1DI300D-100 datasheet
FUJI POWER TRANSISTOR MODULE 1DI300D-100 (300A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANS... See More ⇒
For more information, contact Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http //www.collmer.com This datasheet has been download from www.datasheetcatalog.com Datasheets for electronics components. ... See More ⇒
Detailed specifications: 15GN03FA-TL-H, 15GN03MA, 15GN03MA-TL-E, 1D500A-030, 1DI200A-120, 1DI200E-055, 1DI200K-055, 1DI200Z-100, A42, 1DI300Z-120, 1DI30MA-050, 1DI400A-120, 1DI480A-055, 1DI50F-100, 1DI50H-055, 1DI50K-055, 1DI50MA-050
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