1DI75E-055 Datasheet. Specs and Replacement
Type Designator: 1DI75E-055
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
Package: M204
1DI75E-055 Substitution
- BJT ⓘ Cross-Reference Search
1DI75E-055 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 1DI300Z-120, 1DI30MA-050, 1DI400A-120, 1DI480A-055, 1DI50F-100, 1DI50H-055, 1DI50K-055, 1DI50MA-050, 2N3904, 1DI75E-100, 1DI75F-055, 1DI75F-100, 1SC1383, 30A02CH-TL-E, 30A02MH-TL-E, 30A02MH-TL-H, 30C02CH-TL-E
Keywords - 1DI75E-055 pdf specs
1DI75E-055 cross reference
1DI75E-055 equivalent finder
1DI75E-055 pdf lookup
1DI75E-055 substitution
1DI75E-055 replacement




