1DI75E-055 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1DI75E-055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: M204
1DI75E-055 Transistor Equivalent Substitute - Cross-Reference Search
1DI75E-055 Datasheet (PDF)
..1. Size:144K fuji
1di75e-055.pdf
1di75e-055.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
9.1. Size:123K fuji
1di75f-100.pdf
1di75f-100.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
