50A02CH-TL-H Specs and Replacement
Type Designator: 50A02CH-TL-H
SMD Transistor Code: AX
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 690 MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-23
50A02CH-TL-H Substitution
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50A02CH-TL-H datasheet
Ordering number ENN7487 50A02CH PNP Epitaxial Planar Silicon Transistor 50A02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive, muting circuit. 2150A [50A02CH] Features 2.9 0.15 0.4 Large current capacitance. 3 Low collector-to-emitter saturation volt... See More ⇒
50A02CH Bipolar Transistor -50V, -0.5A, Low VCE(sat), PNP Single www.onsemi.com Features High Collector Current Capability Low Collector to Emitter Saturation Voltage (Resistance) RCE(sat) typ=210m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Low ON-Resistance (Ron) Pb-Free, Halogen Free and RoHS compliance 3 1 Base 1 2 Emitter Typical Applications 3 ... See More ⇒
Ordering number EN7487B 50A02CH Bipolar Transistor http //onsemi.com ( ) 50V, 0.5A, Low VCE sat PNP Single CPH3 Applications Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features High collector current capability Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210m [IC=0.5A, IB=50mA] Low ON-res... See More ⇒
Detailed specifications: 4N772GP, 4SCG110, 4SCG120K, 4SCG160, 4SCG5714, 4SDG110, 4SDG110K, 50A02CH-TL-E, TIP42C, 50A02MH-TL-E, 50A02SS-TL-E, 50C02CH-TL-E, 50C02MH-TL-E, 50C02SS-TL-E, 5487-1, 5487-2, 5488-1
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