5552-4 Specs and Replacement
Type Designator: 5552-4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-5
5552-4 Substitution
- BJT ⓘ Cross-Reference Search
5552-4 datasheet
Detailed specifications: 50A02SS-TL-E, 50C02CH-TL-E, 50C02MH-TL-E, 50C02SS-TL-E, 5487-1, 5487-2, 5488-1, 5488-2, S9014, 55GN01CA-TB-E, 55GN01FA, 55GN01FA-TL-H, 55GN01MA, 55GN01MA-TL-E, 753DCSM, 8050C, 8050SS
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