All Transistors. 8550SS-D Datasheet

 

8550SS-D Datasheet, Equivalent, Cross Reference Search


   Type Designator: 8550SS-D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO92

 8550SS-D Transistor Equivalent Substitute - Cross-Reference Search

   

8550SS-D Datasheet (PDF)

 ..1. Size:366K  mcc
8550ss-c 8550ss-d.pdf

8550SS-D 8550SS-D

MCC8550SS-CTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components8550SS-DCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storage

 8.1. Size:344K  secos
8550sst.pdf

8550SS-D 8550SS-D

8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitter Collector Base JCLASSIFICATION OF hFE (1) A DMillimeterProduct-Rank 8550SST-B 8550SST-C 8550SST-DREF.B Min. Max.A 4.

 8.2. Size:224K  jiangsu
8550ss.pdf

8550SS-D 8550SS-D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-

 9.1. Size:22K  utc
utc8550s.pdf

8550SS-D 8550SS-D

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL PNPTRANSISTORFEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 V*Complimentary to 8050SAPPLICATIONS*Class B push-pull audio amplifier*General purpose applicationsTO-921:EMITTER 2: COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )

 9.2. Size:189K  utc
8550s.pdf

8550SS-D 8550SS-D

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3CURRENT SMALL SIGNAL PNP TRANSISTOR 21SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES TO-92*Collector current up to 700mA *Collector-Emitter vo

 9.3. Size:279K  auk
sta8550sf.pdf

8550SS-D 8550SS-D

STA8550SFPNP Silicon TransistorDescriptions PIN Connection High current application Radio in class B push-pull operation 3 Feature 1 Complementary pair with STC8050SF 2 SOT-23F Ordering Information Type NO. Marking Package Code 8B STA8550SF SOT-23F Device Code hFE Rank Year&Week Code Absolute Maximum Ratings (Ta=25

 9.4. Size:547K  jiangsu
8550s.pdf

8550SS-D 8550SS-D

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors8550S TRANSISTOR (PNP)TO-92 FEATURE Excellent hFE linearity 1. EMITTER2. COLLECTOR3. BASEEquivalent Circuit 8550S=Device code Solid dot=Green molding compound device, 8550S Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number

 9.5. Size:346K  jiangsu
m8550s.pdf

8550SS-D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

 9.6. Size:350K  kec
mps8550s.pdf

8550SS-D 8550SS-D

SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. EFEATUREL B LComplementary to MPS8050S. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55P PM 0.20 M

 9.7. Size:352K  kec
ktc8550s.pdf

8550SS-D 8550SS-D

SEMICONDUCTOR KTC8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8050S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO -35 VC

 9.8. Size:603K  kec
mps8550sc.pdf

8550SS-D 8550SS-D

SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio

 9.9. Size:166K  lge
8550s to-92.pdf

8550SS-D 8550SS-D

8550S(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA

 9.10. Size:500K  willas
8550slt1.pdf

8550SS-D 8550SS-D

FM120-MWILLAS8550SLT1THRUFM1200-MSOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offersSOT-23 better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

 9.11. Size:55K  hsmc
ha8550s.pdf

8550SS-D 8550SS-D

Spec. No. : HE6109HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8050SAbsolute Maximum Ratings Maximum Temperatu

 9.12. Size:55K  hsmc
he8550s.pdf

8550SS-D 8550SS-D

Spec. No. : HE6129HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8550S is designed for general purpose amplifier applications.FeaturesTO-92 High DC Current gain: 100-500 at IC=150mA Complementary to HE8050SAbsolute Maximum Ratings Maximum Temperatures

 9.13. Size:234K  lrc
l8550plt1g l8550qlt1g l8550rlt1g l8550slt1g.pdf

8550SS-D 8550SS-D

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

 9.14. Size:234K  lrc
l8550plt1g l8550plt3g l8550qlt1g l8550qlt3g l8550rlt1g l8550rlt3g l8550slt1g l8550slt3g.pdf

8550SS-D 8550SS-D

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

 9.15. Size:128K  shantou-huashan
hc8550s.pdf

8550SS-D 8550SS-D

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

 9.16. Size:127K  shantou-huashan
h8550s.pdf

8550SS-D 8550SS-D

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

 9.17. Size:976K  kexin
kst8550s.pdf

8550SS-D 8550SS-D

SMD Type TransistorsSMD TypePNP TransistorsKST8550SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCollector current: IC-=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage V

 9.18. Size:982K  kodenshi
k8550s.pdf

8550SS-D 8550SS-D

K8550S PNP Silicon Transistor Descriptions PIN Connection General purpose Bipolar Transistor Features Large collector current Suitable for low-Voltage operation because of Its low saturation voltage Complementary pair with K8050S Ordering Information Type NO. Marking Package Code KV K8550S SOT-23 Device Code HFE Grade

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 431 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: FSB660A | 2SB1131S | BTPA56N3 | 2SB647-D | MMBT2222 | 2SD153 | 2SB1288

 

 
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