BC639G Specs and Replacement

Type Designator: BC639G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

 BC639G Substitution

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BC639G datasheet

 ..1. Size:96K  onsemi

bc639rl1g bc639g.pdf pdf_icon

BC639G

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-... See More ⇒

 9.1. Size:116K  motorola

bc635 bc637 bc639.pdf pdf_icon

BC639G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitter Base Voltage ... See More ⇒

 9.2. Size:47K  philips

bc635 bc637 bc639.pdf pdf_icon

BC639G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLIC... See More ⇒

 9.3. Size:49K  philips

bc635 bc637 bc639 3.pdf pdf_icon

BC639G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI... See More ⇒

Detailed specifications: B764, B772-GR, B772M, B772-O, B772-R, B772-Y, BC637G, BC63916, 13005, BC639RL1G, BC639ZL1G, BC640-016G, BC68-25PAS, BC68PAS, BC69-16PA, BC69-25PAS, BC69PA

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