BC807-25LT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: BC807-25LT3G
SMD Transistor Code: 5B1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
BC807-25LT3G Transistor Equivalent Substitute - Cross-Reference Search
BC807-25LT3G Datasheet (PDF)
bc807-25lt3g bc807-16lt3g.pdf
BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
sbc807-25lt3g.pdf
BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
bc807-40lt3g bc807-25lt1g.pdf
BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
sbc807-25lt1g.pdf
BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
bc807-16lt1g bc807-25lt1g bc807-40lt1g.pdf
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lbc807-25lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
