BC817-25-G Datasheet, Equivalent, Cross Reference Search
Type Designator: BC817-25-G
SMD Transistor Code: 6B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
BC817-25-G Transistor Equivalent Substitute - Cross-Reference Search
BC817-25-G Datasheet (PDF)
bc817-40-g bc817-25-g.pdf
General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)
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PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan
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BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme
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BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme
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BC817W series45 V, 500 mA NPN general-purpose transistorsRev. 7 11 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817W SOT323 - SC-70 BC807WBC817-16W BC807-16WB
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BC817 series45 V, 500 mA NPN general-purpose transistorsRev. 7 18 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817 SOT23 TO-236AB - BC807BC817-16 BC807-16BC817-25 BC807-25
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BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu
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BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications
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BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi
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BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
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BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epox
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
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BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50
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BC817-16/-25/-40 NPN General Purpose AmplifierFEATURES 1. BASE For general AF application. A SOT-23 2. EMITTERDim Min Max Complementary PNP type available 3. COLLECTORA 2.70 3.10EBC807. B 1.10 1.50K B High collector current, high current gain. C 1.0 TypicalD 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48JDG 1.80 2.00ORDERING
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BC817-25BC817-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES AREBC807-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH
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BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollec
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-25dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
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LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-25WT1G3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V CEO 45 VCollectorBase Voltage V CBO 50 VSC-70 EmitterBase Voltage V EBO 5.0 VCollector Current Continuous I C 500 mAdcTHERMAL CHARACTERISTICS
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin
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LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40LT1G3MA
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LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC817-25DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT
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BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current - Continuous IC 500 mAdc1BASE2EMITTERDevi
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BC817 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 45 Volt POWER330 mWFEATURES General purpose amplifier applications0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICA
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KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
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BC817NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50
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RUMW UMW BC817SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a
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BC817-16/-25/-40NPN TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the PNP transistors BC817 arerecommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (TA=25, unless otherwisenoted)Parameter Symbol Valu
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BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B
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HD ST0.3SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )FeaturesSOT- 23For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter
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BC817SOT-23 Plastic-Encapsulate TransistorSOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton S
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www.msksemi.comBC817-16/25/40Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) hFE
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Jingdao Microelectronics co.LTD BC817BC817SOT-23NPN TRANSISTOR3FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types: BC807 (PNP)21.BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2.EMITTER3.COLLECTORSy
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BC817 SeriesTRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 VCo
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BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
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BC817BC817BC817BC817BC8 17TRANSISTOR(NPN)FEATURE For general AF applications SOT-23 High collector current High current gain 1BASE Low collector-emitter saturation voltage 2EMITTER Complementary types: BC807 (PNP) 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage
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RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va
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RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking:BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless
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RoHS RoHSCOMPLIANT COMPLIANTBC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:
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BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a Collector-Base Voltage 50 V Collec
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC817FEATURES NPN Low Frequency AmplifierTransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 45 VCEOCollector-Base VoltageV 50 VCBO-Emitter-
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BC817BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless o
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Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsA Complementary Types Available (BC )SOT-23CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HMaximum
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .